热等离子体裂解天然气制备C2烃

采用氮气热等离子体来裂解天然气制备乙炔乙烯,着重研究了天然气转化率和乙炔、乙烯收率随氮气流量和天然气流量的变化.结果表明,天然气流量与氮气流量之比为11时,可得到较好的结果.当等离子体功率为15kW、天然气流量为3Nm3*h-1、氮气流量为3Nm3*h-1时得到最好的结果.这时天然气转化率为57%,乙炔、乙烯的收率分别为34%和9%;乙炔在反应气中的体积浓度为7.5%,与部分氧化法相似;扣除不参加反应的氮气,乙炔在气相产品中的体积浓度为13.2%,与热力学平衡计算结果基本符合.     

有限混合Gamma分布的拓扑稠密性证明

首先给出了有限混合Erlang分布在正实数轴上所有概率分布中稠密的理论证明,进而给出了混合Gamma分布具有稠密性的结论,说明有限混合Gamma分布具有广泛的适用性,可以用来刻画正实数轴上的任意随机变量.     

Ring head and single pole head recording performance on 3D random SOMA media

Currently, self-organized magnetic array (SOMA) is a non-oriented media, with randomly distributed easy axis directions. We investigate the recording performance of SOMA under two different head types—Ring Head (RH) and single pole head (SPH). Our results show an interesting dependence of the recorded transition pattern on the field strength of RH, where a weak RH field generates longitudinal transition pattern and a strong RH field generates a perpendicular transition pattern in the media. The SPH only generates perpendicular transition patterns and has a higher signal-to-noise ratio (SNR) than that of the RH.     

The compound binomial risk model with time-correlated claims

In this paper, we consider the compound binomial risk model with the time-correlated claims. It is assumed that every main claim will produce a by-claim but the occurrence of the by-claim may be delayed. We obtain the recursive formula of the joint distribution of the surplus immediately prior to ruin and deficit at ruin. Furthermore, the ruin probability is given by means of ruin probability and the deficit at ruin of the classical compound binomial risk model. Finally, we derive an upper bound for the ruin probability.     

Horizontal Connection and Horizontal Mean Curvature in Carnot Groups

In this paper we give a geometric interpretation of the notion of the horizontal mean curvature which is introduced by Danielli Garofalo-Nhieu and Pauls who recently introduced sub- Riemannian minimal surfaces in Carnot groups. This will be done by introducing a natural nonholonomic connection which is the restriction （projection） of the natural Riemannian connection on the horizontal bundle. For this nonholonomic connection and （intrinsic） regular hypersurfaces we introduce the notions of the horizontal second fundamental form and the horizontal shape operator. It turns out that the horizontal mean curvature is the trace of the horizontal shape operator.     

Bivariate Recursive Equations on Excess-of-loss Reinsurance

This paper investigates bivariate recursive equations on excess-of-loss reinsurance. For an insurance portfolio, under the assumptions that the individual claim severity distribution has bounded continuous density and the number of claims belongs to R1 （a, b） family, bivariate recursive equations for the joint distribution of the cedent＇s aggregate claims and the reinsurer＇s aggregate claims are obtained.     

A Rapid Solid-phase Synthesis to Soluble Oligothiophene Molecular Wires

A novel method for the preparation of oligothiophene molecular wires is described via a bi-directional solid-phase synthesis. Using an alternating sequence of bromination and Stille coupling reactions, oligomers were obtained up to the heptamer in excellent yield and purity.     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟     

SiO2-羟基表面上金属原子的第一性原理研究

采用第一性原理方法研究了SiO2-羟基表面上几种金属原子的吸附性质,发现In和Ga在SiO2-羟基表面上的结合很弱,而Fe,Co,Ni在该表面上与Si,O形成强的化学键.等势能面和扩散势垒计算表明In(Ga)的扩散激活能只有0.1-0.3 eV,表明这两种原子容易在表面上扩散.这些结果可以定性地解释纳米合成中的一些实验现象.     

(111)取向(Pb,La)TiO3铁电薄膜中90°纳米带状畴与热释电性能的研究

采用射频磁控溅射技术在Pt/Ti/SiO2/Si(100)衬底上生长了掺镧钛酸铅(PLT)铁电薄膜.用X射线衍射技术(XRD)研究了PLT薄膜结晶性能,结果表明PLT薄膜为(111)择优取向钙钛矿相织构.使用原子力显微镜(AFM)和压电响应力显微镜(PFM)分别观察了PLT薄膜的表面形貌和对应区域的电畴结构.PFM观察显示PLT薄膜中存在90°纳米带状畴,电畴的极化为首尾相接的低能量的排列方式,带状畴的宽度为20-60nm.研究了PLT10铁电薄膜的制备条件与性能之间的关系.发现在优化条件下制备的PLT10铁电薄膜的介电常数εr为365、介电损耗tgδ为0.02,热释电系数γ为2.18×10-8C·(cm2·K)-1,可以满足制备非制冷红外探测器的需要.